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hexfet ? power mosfet s d g parameter typ. max. units r q jc junction-to-case CCC 3.3 r q ja case-to-ambient (pcb mount)** CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance v dss = 55v r ds(on) = 0.065 w i d = 17a description 2/10/00 www.irf.com 1 l logic-level gate drive l surface mount (irlr024n) l straight lead (irlu024n) l advanced process technology l fast switching l fully avalanche rated fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ** when mounted on 1" square pcb (fr-4 or g-10 material ) . for recommended footprint and soldering techniques refer to application note #an-994 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current ? 72 p d @t c = 25c power dissipation 45 w linear derating factor 0.3 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy ? 68 mj i ar avalanche current ? 11 a e ar repetitive avalanche energy ? 4.5 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings pd- 91363e d-pak i-pak irlr024n irlu024n irlr024n irlu024n
irlr/u024n 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 11a, v gs = 0v ? t rr reverse recovery time CCC 60 90 ns t j = 25c, i f = 11a q rr reverse recovery charge CCC 130 200 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 17 72 a ? v dd = 25v, starting t j = 25c, l = 790h r g = 25 w , i as = 11a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) ? pulse width 300s; duty cycle 2%. ? uses irlz24n data and test conditions. ? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact ? i sd 11a, di/dt 290a/s, v dd v (br)dss , t j 175c notes: parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.061 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.065 v gs = 10v, i d = 10a ? CCC CCC 0.080 w v gs = 5.0v, i d = 10a ? CCC CCC 0.110 v gs = 4.0v, i d = 9.0a ? v gs(th) gate threshold voltage 1.0 CCC 2.0 v v ds = v gs , i d = 250a g fs forward transconductance 8.3 CCC CCC s v ds = 25v, i d = 11a CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 16v gate-to-source reverse leakage CCC CCC -100 v gs = -16v q g total gate charge CCC CCC 15 i d = 11a q gs gate-to-source charge CCC CCC 3.7 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 8.5 v gs = 5.0v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 7.1 CCC v dd = 28v t r rise time CCC 74 CCC ns i d = 11a t d(off) turn-off delay time CCC 20 CCC r g = 12 w, v gs = 5.0v t f fall time CCC 29 CCC r d = 2.4 w, see fig. 10 ?? between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 480 CCC v gs = 0v c oss output capacitance CCC 130 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 61 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss s d g l s internal source inductance CCC 7.5 CCC r ds(on) static drain-to-source on-resistance l d internal drain inductance CCC 4.5 CCC i dss drain-to-source leakage current
irlr/u024n www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 0.1 1 10 100 i , drain-to-s ource current (a ) d v , drain-to-source volta g e ( v ) ds a 20 s pulse w idth t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 0.1 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source volta g e ( v ) ds a 20 s pulse w idth t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v j 0.1 1 10 100 2345678910 t = 25c j gs v , gate-to-source volta g e ( v ) d i , drain-to-source c urrent (a) t = 175c j a v = 15v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , d rain-to-s ource o n r esistance ds(on) (normalized) v = 10v gs a i = 18 a d 17 a
irlr/u024n 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 200 400 600 800 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 3 6 9 12 15 0 4 8 12 16 20 q , total g ate char g e ( nc ) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v i = 11a ds ds d 1 10 100 0.4 0.8 1.2 1.6 2.0 t = 25c j v = 0v gs v , source-to-drain volta g e ( v ) i , reverse drain c urrent (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source volta g e ( v ) ds i , drain current (a) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c sin g le pulse c j
irlr/u024n www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g le p u ls e (thermal response) a thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 25 50 75 100 125 150 175 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d
irlr/u024n 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a startin g t , junction temperature ( c ) v = 25v i to p 4.5a 7.8a bottom 11a dd d
irlr/u024n www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? mosfet s * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irlr/u024n 8 www.irf.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006).
irlr/u024n www.irf.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a te 2 - d r a in 3 - s o u r c e 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 c o n t r o llin g d im e n s io n : in c h . 3 c o n f o r m s t o je d e c o u tlin e t o-2 52a a . 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
irlr/u024n 10 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 data and specifications subject to change without notice. 2/10 d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. o u tline co nfo rm s to e ia -481. 16 mm 13 inc h
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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